Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transition.
نویسندگان
چکیده
We present results on terahertz (THz) spectroscopy on epitaxial vanadium dioxide (VO(2)) films grown on sapphire across the metal-insulator transition. X-ray diffraction indicates the VO(2) film is highly oriented with the crystallographic relationship: (002)(film)//(0006)(sub) and [010](film)//[2 ̅1 ̅10](sub). THz studies measuring the change in transmission as a function of temperature demonstrate an 85% reduction in transmission as the thin film completes its phase transition to the conducting phase, which is much greater than the previous observation on polycrystalline films. This indicates the crucial role of microstructure and phase homogeneity in influencing THz properties.
منابع مشابه
Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films
Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device ...
متن کاملCurrent-modulated optical properties of vanadium dioxide thin films in the phase transition region
Articles you may be interested in Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films Effect of oxygen stoichiometry on the insulator-metal phase transition in vanadium oxide thin films studied using optical pump-terahertz probe spectroscopy Appl. Tuning the properties of VO2 thin films through growth temperature for infrared and terahertz modulation applicat...
متن کاملEffect of oxygen stoichiometry on the insulator-metal phase transition in vanadium oxide thin films studied using optical pump-terahertz probe spectroscopy
متن کامل
Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry.
Vanadium dioxide (VO(2)) undergoes a sharp metal-insulator transition (MIT) in the vicinity of room temperature and there is great interest in exploiting this effect in novel electronic and photonic devices. We have measured the work function of vanadium dioxide thin films across the phase transition using variable temperature Kelvin force microscopy (KFM). The work function is estimated to be ...
متن کاملSynthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics
We report on growth and physical properties of vanadium dioxide (VO2) films on model conducting oxide underlayers (Nb-doped SrTiO3 and RuO2 buffered TiO2 single crystals). The VO2 films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The VO2 film grown on Nb doped SrTiO3 shows over two orders of magnitude metal–insulator transition, while VO2 film on RuO2 buff...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Optics letters
دوره 36 10 شماره
صفحات -
تاریخ انتشار 2011